Recent multi-million-pound investment in our microscopy suite has equipped us with the latest generation analytical microscopes with extensive preparation facilities for materials development and investigation. These systems include:
- Focused ion beam combined with scanning electron microscope (FIB-SEM) for high resolution imaging and micro/nanomachining with choice of ion source – gallium ions for high precision and xenon ion plasma for high throughput, large area tomography;
- 3D chemical mapping using a powerful and unique combination of a high-throughput milling focused ion beam filed emission scanning electron microscope (FIB-FESEM) and integrated time-of-flight secondary ion mass spectrometer (TOF-SIMS). This system enables 3D elemental mapping with capabilities to detect light elements and distinguish individual isotopes;
- Electron backscatter diffraction (EBSD) analysis for rapid identification of crystallographic phases mapping with grain orientation, texture and grain size statistics;
- Energy dispersive X-ray spectrometer (EDS) and time-of-flight secondary ion mass spectrometer (TOF-SIMS) for elemental mapping with excellent spatial resolution at the sub-micron scale;
- General scanning electron microscopy (SEM) capability with Tungsten gun variable pressure SEM for high resolution imaging of a range of samples including, conductive metals, non-conductive ceramics, glasses and polymers together with surfaces which are normally hostile to an SEM environment such as wet, oily, dirty and delicate samples. These systems are invariably equipped with EDS as a minimum to enable a high level of investigative productivity on all the system within the unit.
